2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
SST-GP1214A2.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
•
High Gain:
– Typically 29 dB gain across 2.4~2.5 GHz over
temperature 0°C to +85°C
High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress
Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to
23 dBm
– ~4% added EVM up to 21 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
– ~23%/210 mA @ P
OUT
= 22 dBm for 802.11g
– ~25%/240 mA @ P
OUT
= 23 dBm for 802.11b
Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
Low idle current
– ~70 mA I
CQ
High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
•
•
•
•
•
APPLICATIONS:
•
•
•
•
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14A is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14A can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. It typically pro-
vides 29 dB gain with 23% power-added efficiency @ P
OUT
= 22 dBm for 802.11g and 25% power-added efficiency @
P
OUT
= 23 dBm for 802.11b.
The SST12LP14A has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23 dBm. The SST12LP14A can also be con-
figured for high-efficiency operation (typically 17 dBm linear
54 Mbps 802.11g output power at 85 mA total power con-
sumption) which is desirable in embedded applications
such as in hand-held units.
The SST12LP14A also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
REF
~2 mA) makes the SST12LP14A control-
©2005 SST Communications Corp.
S71300-02-000
3/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
lable by an on/off switching signal directly from the base-
band chip. These features coupled with low operating
current make the SST12LP14A ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN
transmitter applications.
The SST12LP14A has an excellent on-chip, single-ended
power detector, which features wide-range (>15 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP14A is offered in 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
