32 Mbit SPI Serial Flash
SST25VF032B
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 50 MHz Max
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Word Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (200 mils)
– 16-lead SOIC (300 mils)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. SST25VF032B SPI serial flash
memories are manufactured with SST’s proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF032B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF032B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF032B device is offered in both 8-lead SOIC
(200 mils) and 16-lead SOIC (300 mils) packages. See Fig-
ures 2 and 3 for pin assignments.
©2006 Silicon Storage Technology, Inc.
S71327-00-000
10/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
