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SST25VF040 参数 Datasheet PDF下载

SST25VF040图片预览
型号: SST25VF040
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位/ 4兆位的SPI串行闪存 [2 Mbit / 4 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 23 页 / 379 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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2 Mbit / 4 Mbit SPI Serial Flash  
SST25VF040  
EOL Product Data Sheet  
TABLE 10: Reliability Characteristics  
Symbol  
Parameter  
Endurance  
Data Retention  
Latch Up  
Minimum Specification  
Units  
Test Method  
1
NEND  
10,000  
100  
Cycles JEDEC Standard A117  
1
TDR  
Years  
mA  
JEDEC Standard A103  
JEDEC Standard 78  
1
ILTH  
100 + IDD  
T10.0 1231(04)  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 11: AC Operating Characteristics VDD = 2.7-3.6V  
Limits  
Symbol  
FCLK  
Parameter  
Min  
Max  
Units  
MHz  
ns  
Serial Clock Frequency  
Serial Clock High Time  
Serial Clock Low Time  
Serial Clock Rise Time  
Serial Clock Fall Time  
CE# Active Setup Time  
CE# Active Hold Time  
CE# Not Active Setup Time  
CE# Not Active Hold Time  
CE# High Time  
20  
TSCKH  
TSCKL  
TSCKR  
TSCKF  
20  
20  
ns  
5
5
ns  
ns  
1
TCES  
20  
20  
ns  
1
TCEH  
ns  
1
TCHS  
10  
ns  
1
TCHH  
10  
ns  
TCPH  
TCHZ  
TCLZ  
TDS  
100  
ns  
CE# High to High-Z Output  
SCK Low to Low-Z Output  
Data In Setup Time  
20  
ns  
0
4
ns  
ns  
TDH  
THLS  
THHS  
THLH  
THHH  
THZ  
Data In Hold Time  
5
ns  
HOLD# Low Setup Time  
HOLD# High Setup Time  
HOLD# Low Hold Time  
HOLD# High Hold Time  
HOLD# Low to High-Z Output  
HOLD# High to Low-Z Output  
Output Hold from SCK Change  
Output Valid from SCK  
Sector-Erase  
10  
10  
15  
10  
ns  
ns  
ns  
ns  
20  
20  
ns  
TLZ  
ns  
TOH  
TV  
0
ns  
23  
25  
ns  
TSE  
ms  
ms  
ms  
TBE  
Block-Erase  
25  
TSCE  
TBP  
Chip-Erase  
100  
20  
Byte-Program  
µs  
T11.2 1231(04)  
1. Relative to SCK.  
©2006 Silicon Storage Technology, Inc.  
S71231(04)-00-000 10/06  
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