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SST25VF512 参数 Datasheet PDF下载

SST25VF512图片预览
型号: SST25VF512
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI串行闪存 [512 Kbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 23 页 / 264 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit SPI Serial Flash
SST25VF512
SST25VF512512Kb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 20 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Packages Available
– 8-lead SOIC (4.9mm x 6mm)
– 8-contact WSON
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-compati-
ble interface that allows for a low pin-count package occu-
pying less board space and ultimately lowering total system
costs. SST25VF512 SPI serial flash memory is manufac-
tured with SST’s proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF512 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash memory technologies. The SST25VF512
device operates with a single 2.7-3.6V power supply.
The SST25VF512 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
©2004 Silicon Storage Technology, Inc.
S71192-06-000
4/04
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.