4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
Data Sheet
TABLE 8: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ
1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
10
10
Units
ms
ms
T8.4 310
T
PU-WRITE1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: C
APACITANCE
Parameter
C
I/O1
C
IN
1
(Ta = 25°C, f=1 Mhz, other pins open)
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T9.0 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END
T
DR1
I
LTH1
1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T10.7 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71077-04-000 6/01
310
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
