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SST29EE010-90-4C-WH 参数 Datasheet PDF下载

SST29EE010-90-4C-WH图片预览
型号: SST29EE010-90-4C-WH
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )页面模式的EEPROM [1 Megabit (128K x8) Page-Mode EEPROM]
分类和应用: 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 26 页 / 268 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1 Megabit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 5.0V-only for the SST29EE010
– 3.0-3.6V for the SST29LE010
– 2.7-3.6V for the SST29VE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs
(typical)
• Fast Read Access Time
– 5.0V-only operation: 90 and 120 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32 Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 20mm, 8mm x 14mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PRODUCT DESCRIPTION
The SST29EE010/29LE010/29VE010 are 128K x8
CMOS Page-Write EEPROMs manufactured with SST’s
proprietary, high performance CMOS SuperFlash tech-
nology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability
compared with alternate approaches. The
SST29EE010/29LE010/29VE010 write with a single
power supply. Internal Erase/Program is transparent to
the user. The SST29EE010/29LE010/29VE010
conform to JEDEC standard pinouts for byte-wide
memories.
Featuring high performance Page-Write, the
SST29EE010/29LE010/29VE010 provide a typical Byte-
Write time of 39 µsec. The entire memory, i.e., 128
KBytes, can be written page-by-page in as little as 5
seconds, when using interface features such as Toggle
Bit or Data# Polling to indicate the completion of a Write
cycle. To protect against inadvertent write, the
SST29EE010/29LE010/29VE010 have on-chip hard-
ware and Software Data Protection schemes. Designed,
manufactured, and tested for a wide spectrum of applica-
tions, the SST29EE010/29LE010/29VE010 are offered
with a guaranteed Page-Write endurance of 10
4
cycles.
Data retention is rated at greater than 100 years.
The SST29EE010/29LE010/29VE010 are suited for ap-
plications that require convenient and economical updat-
ing of program, configuration, or data memory. For all
system applications, the SST29EE010/29LE010/
29VE010 significantly improve performance and reliabil-
ity, while lowering power consumption. The
SST29EE010/29LE010/29VE010 improve flexibility
while lowering the cost for program, data, and configura-
tion storage applications.
To meet high density, surface mount requirements, the
SST29EE010/29LE010/29VE010 are offered in 32-pin
TSOP (8mm x 20mm and 8mm x 14mm) and 32-lead
PLCC packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1 and 2 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE010/29LE010/29VE010
does not require separate Erase and Program opera-
tions. The internally timed write cycle executes both
erase and program transparently to the user. The
SST29EE010/29LE010/29VE010 have industry stan-
dard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE010/
29LE010/29VE010 are compatible with industry stan-
dard EEPROM pinouts and functionality.
Read
The Read operations of the SST29EE010/29LE010/
29VE010 are controlled by CE# and OE#, both have to
be low for the system to obtain data from the outputs.
CE# is used for device selection. When CE# is high, the
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
304-3 6/00
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