4 Mbit Small-Sector Flash
SST29SF040 / SST29VF040
Data Sheet
TABLE 6: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
FOR
SST29VF040
Limits
Symbol
I
DD
Parameter
Power Supply Current
Read
Program and Erase
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
V
DD
-0.2
0.7V
DD
V
DD
-0.3
0.2
25
30
15
1
10
0.8
mA
mA
µA
µA
µA
V
V
V
V
V
Min
Max
Units
Test Conditions
Address input=V
ILT
/V
IHT
, at f=5 MHz,
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 µA, V
DD
=V
DD
Min
I
OH
=-100 µA, V
DD
=V
DD
Min
T6.8 1160
TABLE 7: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE
1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
µs
µs
T7.1 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: C
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O
1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T8.1 1160
C
IN1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T9.2 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2004 Silicon Storage Technology, Inc.
S71160-10-000
2/04
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
