2 Mbit (256K x8) Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
SST29EE020 / SST29LE020 / SST29VE0202 Mb Page-Mode flash memories
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 5.0V-only for SST29EE020
– 3.0-3.6V for SST29LE020
– 2.7-3.6V for SST29VE020
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 2048 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 10 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 5.0V-only operation: 120 and 150 ns
– 3.0-3.6V operation: 200 and 250 ns
– 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write
EEPROM manufactured with SST’s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE020 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE020 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE020 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 256 KBytes, can be written page-by-
page in as little as 10 seconds, when using interface fea-
tures such as Toggle Bit or Data# Polling to indicate the
completion of a Write cycle. To protect against inadvertent
write, the SST29EE/LE/VE020 have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST29EE/LE/VE020 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST29EE/LE/VE020 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE020 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE020 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
SST29EE/LE/VE020 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE020 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE020 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE020 are compatible with industry standard EEPROM
pinouts and functionality.
©2001 Silicon Storage Technology, Inc.
S71062-06-000 6/01
307
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
