512 Kbit (64K x8) Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
SST29EE512 / SST29LE512 / SST29VE512512Kb Page-Mode flash memories
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 5.0V-only for SST29EE512
– 3.0-3.6V for SST29LE512
– 2.7-3.6V for SST29VE512
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and 10 mA
(typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 512 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 2.5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 5.0V-only operation: 70 and 90 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write
EEPROMs manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-
gate cell design and thick oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches. The SST29EE/LE/VE512 write
with a single power supply. Internal Erase/Program is
transparent to the user. The SST29EE/LE/VE512 con-
form to JEDEC standard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/
LE/VE512 provide a typical Byte-Write time of 39 µsec.
The entire memory, i.e., 64 KBytes, can be written page-
by-page in as little as 2.5 seconds, when using interface
features such as Toggle Bit or Data# Polling to indicate
the completion of a Write cycle. To protect against inad-
vertent write, the SST29EE/LE/VE512 have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum
of applications, the SST29EE/LE/VE512 are offered with
a guaranteed Page-Write endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST29EE/LE/VE512 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applica-
tions, the SST29EE/LE/VE512 significantly improve per-
formance and reliability, while lowering power
consumption. The SST29EE/LE/VE512 improve flexibil-
ity while lowering the cost for program, data, and configu-
ration storage applications.
To meet high density, surface mount requirements, the
SST29EE/LE/VE512 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE512 do not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE512 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE512 are compatible with industry standard EEPROM
pinouts and functionality.
©2001 Silicon Storage Technology, Inc.
S71060-06-000 6/01
301
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
