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SST32HF3282-70-4E-LFS 参数 Datasheet PDF下载

SST32HF3282-70-4E-LFS图片预览
型号: SST32HF3282-70-4E-LFS
PDF下载: 下载PDF文件 查看货源
内容描述: 多用途闪存+ + SRAM ComboMemory [Multi-Purpose Flash Plus + SRAM ComboMemory]
分类和应用: 闪存静态存储器
文件页数/大小: 36 页 / 432 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1642 / SST32HF1682 / SST32HF3242 / SST32HF3282
SST32HF1622C / SST32HF1642C / SST32HF3242C
SST32HF16x2x / 32x2x / 6482x16/32/64Mb Flash + 4/8Mb SRAM, 32Mb Flash + 8Mb SRAM
(x16) MCP ComboMemories
Preliminary Specifications
FEATURES:
• ComboMemories organized as:
– SST32HF1622C: 1M x16 Flash + 128K x16 SRAM
– SST32HF1642x: 1M x16 Flash + 256K x16 SRAM
– SST32HF1682: 1M x16 Flash + 512K x16 SRAM
– SST32HF3242x: 2M x16 Flash + 256K x16 SRAM
– SST32HF3282: 2M x16 Flash + 512K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
– Read from or Write to SRAM while
Erase/Program Flash
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current:
- SST32HFx2: 60 µA (typical)
- SST32HFx2C: 12 µA (typical)
• Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
• Erase-Suspend/Erase-Resume Capabilities
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
• Fast Read Access Times:
– Flash: 70 ns
– SRAM: 70 ns
• Latched Address and Data for Flash
• Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Flash Automatic Erase and Program Timing
– Internal V
PP
Generation
• Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Package Available
– 63-ball LFBGA (8mm x 10mm x 1.4mm)
– 62-ball LFBGA (8mm x 10mm x 1.4mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST32HFx2/x2C ComboMemory devices integrate
a CMOS flash memory bank with a CMOS SRAM mem-
ory bank in a Multi-Chip Package (MCP), manufactured
with SST’s proprietary, high performance SuperFlash
technology. The SST32HF16x2/32x2 devices use a
PseudoSRAM. The SST32HF16x2C/3242C devices use
standard SRAM.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
7 µsec. To protect against inadvertent flash write, the
SST32HFx2/x2C devices contain on-chip hardware and
software data protection schemes. The SST32HFx2/x2C
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HFx2/x2C devices consist of two independent
memory banks with respective bank enable signals. The
Flash and SRAM memory banks are superimposed in the
same memory address space. Both memory banks share
common address lines, data lines, WE# and OE#. The
memory bank selection is done by memory bank enable
©2005 Silicon Storage Technology, Inc.
S71253-03-000
5/05
1
signals. The SRAM bank enable signal, BES# selects the
SRAM bank. The flash memory bank enable signal, BEF#
selects the flash memory bank. The WE# signal has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The SDP command
sequence protects the data stored in the flash memory
bank from accidental alteration.
The SST32HFx2/x2C provide the added functionality of
being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.