16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory
SST34HF162C / SST34HF164C
SST34HF162C16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory
Preliminary Specifications
FEATURES:
• Flash Organization: 1M x16
– 16 Mbit: 12 Mbit + 4 Mbit
• Concurrent Operation
– Read from or Write to SRAM while
Erase/Program Flash
• SRAM Organization:
– 2 Mbit:128K x16
– 4 Mbit: 256K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption: (typical values @ 5 MHz)
– Active Current: Flash 10 mA (typical)
SRAM 6 mA (typical)
– Standby Current: 10 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Read Access Time
– Flash: 70 ns
– SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Latched Address and Data
• Fast Erase and Word-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 µs
• Automatic Write Timing
– Internal
V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 48-ball LBGA (10mm x 12mm)
PRODUCT DESCRIPTION
The SST34HF162C/164C ComboMemory devices inte-
grate a 1M x16 CMOS flash memory bank with either 128K
x16 or 256K x16 CMOS SRAM memory bank in a multi-
chip package (MCP). These devices are fabricated using
SST’s proprietary, high-performance CMOS SuperFlash
technology incorporating the split-gate cell design and
thick-oxide tunneling injector to attain better reliability and
manufacturability compared with alternate approaches.
The SST34HF162C/164C devices are ideal for applica-
tions such as cellular phones, GPS devices, PDAs, and
other portable electronic devices in a low power and small
form factor system.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles. The SST34HF162C/164C devices offer a
guaranteed endurance of 10,000 cycles. Data retention is
rated at greater than 100 years. With high-performance
Program operations, the flash memory banks provide a
typical Program time of 7 µsec. The entire flash memory
bank can be erased and programmed word-by-word in 4
seconds (typically) for the SST34HF162C/164C, when
using interface features such as Toggle Bit or Data# Polling
©2004 Silicon Storage Technology, Inc.
S71269-01-000
9/04
1
to indicate the completion of Program operation. To protect
against inadvertent flash write, the SST34HF162C/164C
devices contain on-chip hardware and software data pro-
tection schemes.
The flash and SRAM operate as two independent memory
banks with respective bank enable signals. The memory
bank selection is done by two bank enable signals. The
SRAM bank enable signal, BES#, selects the SRAM bank.
The flash memory bank enable signal, BEF#, has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The memory banks are
superimposed in the same memory address space where
they share common address lines, data lines, WE# and
OE# which minimize power consumption and area. See
Designed, manufactured, and tested for applications requir-
ing low power and small form factor, the SST34HF162C/
164C are offered in both commercial and extended temper-
atures and a small footprint package to meet board space
constraint requirements. See Figure 2 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
ComboMemory is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
