16 Mbit Concurrent SuperFlash
SST36VF1601
Data Sheet
TABLE 8: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V
Limits
Symbol Parameter
Min
Max
Units
Test Conditions
IDD
Active VDD Current
Address input=VIL/VIH, at f=1/TRC Min,
VDD=VDD Max
Read
35
40
75
20
20
1
mA
mA
mA
µA
µA
µA
µA
V
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=VIL, OE#=VIH
Program and Erase
Concurrent Read/Write
Standby VDD Current
Reset VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
ISB
CE#=VIHC, VDD=VDD Max
RST# = VSS 0.3V
IRT
ILI
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
1
VIL
0.8
0.3
VILC
VIH
VIHC
VOL
VOH
Input Low Voltage (CMOS)
Input High Voltage
V
VDD=VDD Max
0.7 VDD
VDD-0.3
V
VDD=VDD Max
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
V
VDD=VDD Max
0.2
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
VDD-0.2
V
T8.6 373
TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
100
Units
µs
1
TPU-READ
Power-up to Read Operation
Power-up to Write Operation
1
TPU-WRITE
100
µs
T9.2 373
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
10 pF
10 pF
1
CIN
VIN = 0V
T10.0 373
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T11.1 373
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71142-06-000 11/01 373
12
SST [ SILICON STORAGE TECHNOLOGY, INC ]
