512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
Data Sheet
TABLE 5: Program/Erase DC Operating Characteristics V
DD
=2.7-3.6V
(T
A
= 25°C±5°C)
Limits
Symbol Parameter
I
DD
I
LI
I
LO
V
H
I
HA9
I
HOE#
V
DD
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
and OE#
Supervoltage Current for A
9
Supervoltage Current for OE#
11.4
Min
Max
20
1
10
12
200
3
Units
mA
µA
µA
V
µA
mA
OE#=V
H
Max, A
9
=V
H
Max,
V
DD
=V
DD
Max, CE# = V
IL
CE#=V
IL,
OE#=11.4-12V,
V
DD
=V
DD
Max, WE#=V
IL
T5.2 1151
Test Conditions
CE#=V
IL,
OE#=V
H
, V
DD
=V
DD
Max, WE#=V
IL
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
TABLE 6: Recommended System Power-up Timings
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
µs
µs
T6.1 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: Capacitance
(T
A
= 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T7.0 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: Reliability Characteristics
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T8.3 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
6
SST [ SILICON STORAGE TECHNOLOGY, INC ]
