1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
AC CHARACTERISTICS
TABLE 9: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 4.5-5.5V
SST39SF010A/020A/040-45
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
0
0
0
15
15
0
Min
45
45
45
25
0
0
25
25
Max
SST39SF010A/020A/040-70
Min
70
70
70
35
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
T9.4 1147
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
SE
T
SCE
Parameter
Byte-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Chip-Erase
0
30
0
0
0
10
40
40
30
30
40
0
150
25
100
Min
Max
20
Units
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
T10.1 1147
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2003 Silicon Storage Technology, Inc.
S71147-06-000
8/04
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
