512 Kbit (x8) Multi-Purpose Flash
SST39SF512
SST39SF5125.0V 512Kb (x8) MPF memory
Data Sheet
FEATURES:
• Organized as 64K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 10 mA (typical)
– Standby Current: 10 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program
– Sector-Erase Time: 7 ms (typical)
– Chip-Erase Time: 15 ms (typical)
– Byte-Program Time: 20 µs (typical)
– Chip Rewrite Time: 2 seconds (typical)
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF512 are CMOS Multi-Purpose Flash (MPF)
manufactured with SST’s proprietary, high performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST39SF512 devices write (Program or Erase) with a
4.5-5.5V power supply. The SST39SF512 device conforms
to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39SF512 devices provide a maximum Byte-Program
time of 30 µsec. These devices use Toggle Bit or Data#
Polling to indicate the completion of Program operation. To
protect against inadvertent write, they have on-chip hard-
ware and Software Data Protection schemes. Designed,
manufactured, and tested for a wide spectrum of applica-
tions, these devices are offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39SF512 devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during erase and program than alternative flash
technologies. The total energy consumed is a function of
©2003 Silicon Storage Technology, Inc.
S71149-05-000
11/03
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF512 are offered in 32-lead PLCC, 32-lead TSOP
,
and a 600 mil, 32-pin PDIP packages. See Figures 1, 2,
and 3 for pin assignments.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
