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SST39VF3202-70-4I-EK 参数 Datasheet PDF下载

SST39VF3202-70-4I-EK图片预览
型号: SST39VF3202-70-4I-EK
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位/ 32兆位/ 64兆位( X16 )多用途闪存+ [16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 32 页 / 511 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 7: CFI Q
UERY
I
DENTIFICATION
S
TRING1 FOR
SST39VF160
X
/320
X
/640
X
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Data
0051H
0052H
0059H
0001H
0007H
0000H
0000H
0000H
0000H
0000H
0000H
Data
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
T7.1 1223
1. Refer to CFI publication 100 for more details.
TABLE 8: S
YSTEM
I
NTERFACE
I
NFORMATION FOR
SST39VF160
X
/320
X
/640
X
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0003H
0000H
0004H
0005H
0001H
0000H
0001H
0001H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
µs (2
3
= 8 µs)
Typical time out for min. size buffer program 2
N
µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
5
= 32 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
3
= 16 µs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
T8.3 1223
TABLE 9: D
EVICE
G
EOMETRY
I
NFORMATION FOR
SST39VF1601/1602
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0001H
0010H
0000H
001FH
0000H
0000H
0001H
Data
Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FF = 511
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 1223
©2005 Silicon Storage Technology, Inc.
S71223-04-000
11/05
10