16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories
Preliminary Specifications
FEATURES:
• Organized as 2M x8
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 64 KByte)
for SST39VF1682
– Bottom Block-Protection (bottom 64 KByte)
for SST39VF1681
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Block-Erase Capability
– Uniform 64 KByte blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and Command sets
• Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-lead TSOP (12mm x 20mm)
PRODUCT DESCRIPTION
The SST39VF168x devices are 2M x8 CMOS Multi-Pur-
pose Flash Plus (MPF+) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared
with alternate approaches. The SST39VF168x write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pinouts for x8 mem-
ories.
Featuring high performance Byte-Program, the
SST39VF168x devices provide a typical Byte-Program
time of 7 µsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF168x devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
©2003 Silicon Storage Technology, Inc.
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they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF168x are offered in both 48-ball TFBGA and
48-lead TSOP packages. See Figures 1 and 2 for pin
assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
