Product Description
Stanford Microdevices SCA-3 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 5GHz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Typical IP3 at 850 MHz with 65mA is
32.8 dBm.
These unconditionally stable amplifiers provide 13.7 dB of gain
and 17.3 dBm of 1dB compressed power and require only a
single positive voltage supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation. This MMIC is an ideal choice for wireless applica-
tions such as cellular, PCS, CDPD, wireless data and SONET.
16
15
14
Small Signal Gain vs. Frequency @ I
D
=65mA
SCA-3
Preliminary
Preliminary
DC-5 GHz, Cascadable
GaAs HBT MMIC Amplifier
NGA-489 Recommended for New Designs
dB
13
12
11
10
0
1
2
3
4
5
6
Product Features
High Output IP3: 32.8 dBm @ 850 MHz
Cascadable 50 Ohm Gain Block
Patented GaAs HBT Technology
Operates From Single Supply
Applications
Cellular, PCS, CDPD, Wireless Data, SONET
Units
Min.
Ty p.
17.3
17.6
17.4
29.8
32.8
30.3
29.1
13.7
13.6
13.6
5000
1.7:1
1.5:1
18.3
18.4
18.4
5.6
4.4
4.9
224
5.4
Max.
Frequency (GHz)
Electrical Specifications
Sy mbol
Parameters: Test Conditions:
GHz
Z
0
= 50 Ohms, I
D
= 65mA, T = 25°C
Output Pow er at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
P
1dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
IP
3
Third Order Intercept Point
Pow er out per tone = 0 dBm
S
21
Bandw idth
S
11
S
22
S
12
NF
V
D
Rth,j-l
Small Signal Gain
(Determined by S
11
, S
22
Values)
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Voltage
Thermal Resistance (junction - lead)
12.3
f = DC-5000 MHz
f = DC-5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 1950 MHz
-
-
dB
dB
dB
dB
V
o
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101392 Rev A
STANFORD [ STANFORD MICRODEVICES ]
