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SCA-7 参数 Datasheet PDF下载

SCA-7图片预览
型号: SCA-7
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz的,可级联的GaAs HBT MMIC放大器 [DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 3 页 / 256 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SCA-7的Datasheet PDF文件第2页浏览型号SCA-7的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SCA-7 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband perfor-
mance up to 3 GHz. The heterojunction increases break-
down voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 40mA is +24dBm.
These unconditionally stable amplifiers provides 21dB of gain
and +12dBm of 1dB compressed power and requires only a
single positive voltage supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
SCA-7
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
High Output IP3 : +24dBm
High Gain : Up to 21dB
Cascadable 50 Ohm : 1.5:1 VSWR
Patented GaAs HBT Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Output IP3 vs. Frequency
30
28
26
50 Ohm Gain Blocks
dBm
24
22
20
0.1
1
2
3
GHz
Cellular, PCS, CDPD
Wireless Data, SONET
U n its
M in .
Ty p .
M ax.
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : T e s t C o n d itio n s :
Id = 4 0 m A , Z
0
= 5 0 O h m s
G
P
G
F
P
1dB
NF
IP
3
T
D
IS O L
VD
d G /d T
d V /d T
P o w e r G a in
G a in F la tn e s s
G a in F la tn e s s o v e r a n y 1 0 0 M H z b a n d
O u tp u t P o w e r a t 1 d B C o m p r e s s io n :
N o is e F ig u r e
T h ir d O r d e r In te r c e p t P o in t
O u tp u t To n e @ 0 d B m 1 0 M H z A p a r t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v ic e G a in Te m p e r a tu r e C o e ff ic ie n t
D e v ic e V o lta g e Te m p e r a tu r e C o e ffic ie n t
f = 0 .1 - 2 .0 G H z
f = 2 .0 - 3 .0 G H z
f = 0 .1 - 2 .0 G H z
f = 0 .1 - 2 .0 G H z
f = 0 .1 - 3 .0 G H z
f = 0 .1 - 2 .0 G H z
f = 1 .9 G H z
f = 0 .1 - 3 .0 G H z
dB
dB
dB
dB
dBm
dB
dBm
psec
dB
V
d B /d e g C
m V /d e g C
18
20
18
+ /- 1 . 2
+ /- 0 . 1
1 2 .0
3 .8
2 3 .0
2 4 .0
100
22
3 .5
4 .0
- 0 .0 0 3
- 4 .0
4 .5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-125