Preliminary
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Pin #
1
Function
Description
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
GND
Sames as Pin 1
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
GND
Sames as Pin 1
GND
Sames as Pin 1
RF OUT RF output and bias pin. DC voltage is
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Device Schematic
2
3
4
5
6
Application Schematic for +5V Operation at 900 MHz
Note: A bias resistor is needed for
stability over temperature
1uF
68pF
115 ohms
V
CC
=+5V
33nH
50 ohm
microstrip
1,2
50 ohm
microstrip
3
6
100pF
4,5
100pF
Application Schematic for +5V Operation at 1900 MHz
1uF
22pF
115 ohms
V
CC
=+5V
22nH
50 ohm
microstrip
1,2
50 ohm
microstrip
3
6
68pF
4,5
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
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Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
3
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