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SGA-4363Z 参数 Datasheet PDF下载

SGA-4363Z图片预览
型号: SGA-4363Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 2000 MHZ级联SIGE HBT MMIC放大器 [DC-2000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 253 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
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Product Description
Stanford Microdevices’ SGA-4363 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 45mA , the SGA-4363 typically provides +28.7 dBm output
IP3, 16.4 dB of gain, and +14.3 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Frequency
24
18
Gain (dB)
GAIN
IRL
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
SGA-4363
DC-2000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
•
High Gain : 14.8 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented SiGe Technology
0
-10
-20
-30
-40
Return Loss (dB)
ORL
• Operates From Single Supply
• Low Thermal Resistance Package
12
6
0
0
1
2
3
4
Frequency (GHz)
5
6
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
• Satellite
Units
dB
dB
dBm
dBm
dBm
dBm
M Hz
dB
dB
dB
V
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
2.9
Frequency
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
14.8
Ty p.
16.4
14.8
14.3
13.0
28.7
25.7
2000
14.4
10.7
3.1
3.2
255
3.5
Max.
18.0
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
(Pow er out per tone = -5dBm)
Bandw idth
Determined by Return Loss (<-10dB)
IRL
ORL
NF
V
D
R
Th
Input Return Loss
Output Return Loss
Noise Figure
Device Voltage
Thermal Resistance
V
S
= 8 V
R
BIAS
= 110 Ohms
I
D
= 45 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100642 Rev. B