Product Description
Stanford Microdevices SGA-7489 is a high performance
cascadeable 50-ohm amplifier designed for operation at 5
Volts DC. This RFIC uses the latest Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process
featuring 1 micron emitters with F
T
up to 50 GHz.
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-7489 requires only DC blocking
and bypass capacitors and a bias inductor for external
components. Frequency performance may be extended using
the 2 GHz application circuit shown on sheet 5.
Preliminary
SGA-7489
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
S21 vs. Frequency, T=+25C, I
d
=130 mA
25
20
Product Features
DC-3000 MHz Operation
Single Voltage Supply
High Output Intercept: +36 dBm typ. at 850 MHz
Low Noise Figure: 2.9 dB typ. at 850 MHz
Applications
Oscillator Amplifiers
PA for Low / Medium Power Applications
IF/ RF Buffer Amplifier
Drivers for CATV Amplifiers
LO Driver Amplifier
Units
Min.
Ty p.
22.8
22.6
22.4
20.3*
38.6
37.2
36.0
35.7*
23.7
23.0
22.0
18.3*
3000
11.8
9.3
25.8
25.8
25.4
22.7*
2.9
5.0
82
* Using
2 GHz
App.Ckt.
(sheet 5)
Max.
Notes
* Using
2 GHz
App.Ckt.
(sheet 5)
* Using
2 GHz
App.Ckt.
(sheet 5)
* Using
2 GHz
App.Ckt.
(sheet 5)
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
MHz
S21 (dB)
15
10
5
0
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Sy mbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, I
D
= 130 mA, T = 25
o
C
Output Pow er at 1dB Compression
f
f
f
f
f
f
f
f
f
f
f
f
=
=
=
=
=
=
=
=
=
=
=
=
P
1dB
100 MHz
500 MHz
850 MHz
1950 MHz *
100 MHz
500 MHz
850 MHz
1950 MHz *
100 MHz
500 MHz
850 MHz
1950 MHz *
IP
3
Third Order Intercept Point
Pow er out per tone = 0 dBm
S
21
Bandw idth
S
11
S
22
S
12
NF
V
D
Rth,j-l
Small Signal Gain
(Determined by S
11
, S
22
Values)
Input Return Loss
Output Return Loss
f = DC-3000 MHz
f = DC-3000 MHz
f
f
f
f
=
=
=
=
100 MHz
500 MHz
850 MHz
1950 MHz *
dB
dB
dB
dB
dB
dB
dB
V
o
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Voltage
Thermal Resistance (junction - lead)
f = 850 MHz
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101801 Rev A
STANFORD [ STANFORD MICRODEVICES ]
