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SHF-0198 参数 Datasheet PDF下载

SHF-0198图片预览
型号: SHF-0198
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 12 GHz时, 0.5瓦AIGaAs /砷化镓HFET [DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET]
分类和应用:
文件页数/大小: 3 页 / 73 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
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Product Description
Stanford Microdevices’ SHF-0198 series is a high perfor-
mance AlGaAs/GaAs Heterostructure FET housed in a
low-cost stripline-mount ceramic package. HFET technol-
ogy improves breakdown voltage while minimizing Schottky
leakage current for higher power-added efficiency and
improved linearity.
Output power at 1dB compression for the SHF-0198 is
+27dBm when biased for Class A operation at 9V and
150mA. This HFET is also characterized at 5V for lower
voltage applications.
This device can be used in both analog and digital wireless
communication infrastructure and subscriber equipment
including cellular, PCS, CDPD, wireless data and pagers.
SHF-0198
DC-12 GHz, 0.5 Watt
AIGaAs/GaAs HFET
Product Features
Patented AIGaAs/GaAs Heterostructure FET
Technology
+27dBm Output Power at 1dB Compression
High Power GaAs FETs
Output Power vs. Frequency
30
28
+38 dBm Output IP3
High Power Added Efficiency - up to 40% at
Class A
17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz
dBm
26
24
DC
2
4
6
8
10
12
GHz
Applications
AMPS, PCS Basestations
VSAT
Electrical Specifications at Ta = 25C
S y m b o l
G p
P a r a m e te r s : T e s t C o n d itio n s
P o w e r G a in
f =
f =
f =
C o m p r e s s io n
f =
f =
f =
f =
f =
f =
f =
f =
f =
0 .9 G H z
1 .9 G H z
2 .5 G H z
0 .9 G H z
1 .9 G H z
2 .5 G H z
0 .9 G H z
1 .9 G H z
2 .5 G H z
0 .9 G H z
1 .9 G H z
2 .5 G H z
U n its
d B
d B
d B
d B
d B
d B
d B
d B
d B
d B
d B
d B
m A
M in .
1 5
1 2
Ty p .
1 7
1 4
1 2
+ 2 7 .5
+ 2 7 .3
+ 2 7 .0
+ 3 8
+ 3 8
+ 3 7
1 .8
2 .2
2 .5
3 0 0
M a x .
P 1 d B
O u tp u t P o s e r a t 1 d B
+ 2 6 .5
+ 2 6 .3
IP 3
O u tp u t T h ir d O r d e r I n te r c e p t P o in t
N F o p t
N o is e F ig u r e
Id s s
G m
V p
V b g s
V b g d
S a tu ra te d
V g s = 0 V
D r a in C u r r e n t: V d s = 3 V ,
T ra n s c o n d u c ta n c e : V d s = 3 V , V g s = 0 V
P in c h - o ff V o lta g e : V d s = 3 V , Id s = 1 m A
G a te - to - S o u r c e B r e a k d o w n V o lta g e
G a t e - t o - D r a in
B r e a k d o w n V o lt a g e
m S
V
V
V
1 7 5
-2 .2
-2 0
-2 0
-1 2
-1 2
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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