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SNA-200 参数 Datasheet PDF下载

SNA-200图片预览
型号: SNA-200
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 6.5 GHz的,可级联的GaAs MMIC放大器 [DC-6.5 GHz, Cascadable GaAs MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 3 页 / 67 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-200的Datasheet PDF文件第2页浏览型号SNA-200的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. This amplifier
provides 16dB of gain when biased at 50mA and 4V.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
packaged form (SNA-276, -286 & -287), its small size
(0.33mm x 0.33mm) and gold metallization make it an ideal
choice for use in hybrid circuits.
The SNA-200 is available in gel paks at 100 devices per
container.
SNA-200
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
16
15
dBm
14
13
12
0.5
1
1.5
2
4
6
8
10
Product Features
Cascadable 50 Ohm Gain Block
16dB Gain, +14dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Chip Back Is Ground
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
50 Ohm Gain Blocks
GHz
Electrical Specifications at Ta = 25° C
°
S ym bol
P a r a m e te r s : T e s t C o n d itio n s :
Id = 5 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l P o w e r G a in
f = 0 . 1 - 2 .0 G H z
f = 2 . 0 - 4 .0 G H z
f = 4 . 0 - 6 .5 G H z
f = 0 . 1 - 4 .0 G H z
U n its
dB
dB
dB
dB
GHz
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 . 1 - 6 .5 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 . 1 - 6 .5 G H z
dBm
dB
M in .
1 5 .0
1 4 .0
1 3 .0
Ty p .
1 6 .0
1 5 .0
1 4 .0
+ /1 .0
6 .5
1 4 .0
5 .5
1 .5 :1
2 7 .0
100
20
3 .5
4 .0
- 0 .0 0 1 8
- 4 .0
4 .5
6 .0
M ax.
G
P
G
F
G a i n F la t n e s s
3 d B B a n d w id t h
O u t p u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u r e
In p u t/O u tp u t
T h ir d O r d e r In te r c e p t P o in t
G r o u p D e la y
BW 3dB
P
1dB
NF
VSW R
IP
T
3
-
dBm
psec
dB
V
D
IS O L
V
D
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v i c e G
a i n
T e m p e r a t u r e C o e ff i c i e n t
D e v ic e V o lta g e Te m p e ra tu r e
C o e ff i c i e n t
d G /d T
d V /d T
d B
/d e g C
m V /d e g C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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