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SNA-300 参数 Datasheet PDF下载

SNA-300图片预览
型号: SNA-300
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz的,可级联的GaAs MMIC放大器 [DC-3 GHz, Cascadable GaAs MMIC Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 66 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-300的Datasheet PDF文件第2页浏览型号SNA-300的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SNA-300 is a GaAs monolithic broad-
band amplifier (MMIC) in die form. This amplifier provides
22dB of gain when biased at 35mA and 4V.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
packaged form (SNA-376, -386 & -387), its small size (0.33mm
x 0.33mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-300 is available in gel paks at 100 devices per
container.
SNA-300
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Output Power vs. Frequency
12
11
dBm
10
9
8
0.1
0.5
1
1.5
2
4
6
8
10
Cascadable 50 Ohm Gain Block
22dB Gain, +10dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Chip Back is Ground
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
U n it s
f = 0 .1 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -3 .0 G H z
f = 0 .1 -3 .0 G H z
dB
dB
dB
dB
G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -3 .0 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -3 .0 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
3 .5
dBm
dB
50 Ohm Gain Blocks
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : T e s t C o n d itio n s :
Id = 3 5 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l P o w e r G a in
M in .
2 1 .0
2 0 .0
1 9 .0
Ty p .
2 3 .0
2 2 .0
2 1 .0
+ /- 1 .5
3 .0
1 0 .0
4 .0
1 .5 :1
2 3 .0
100
2 2 .0
4 .0
-0 .0 0 3
-4 .0
M ax.
G
P
G
F
G a in F la tn e s s
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u r e
In p u t / O u tp u t
T h ir d O r d e r In te r c e p t P o in t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v ic e G a in T e m p e r a t u r e C o e ff ic ie n t
D e v ic e V o lt a g e T e m p e r a t u r e C o e ff ic ie n t
BW 3dB
P
1dB
N F
VSW R
IP
T
3
5 .0
D
IS O L
VD
d G /d T
d V /d T
4 .5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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