欢迎访问ic37.com |
会员登录 免费注册
发布采购

SNA-476-TR1 参数 Datasheet PDF下载

SNA-476-TR1图片预览
型号: SNA-476-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 8 GHz的,可级联的GaAs MMIC放大器 [DC-8 GHz, Cascadable GaAs MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 3 页 / 87 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-476-TR1的Datasheet PDF文件第2页浏览型号SNA-476-TR1的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SNA-476 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline ceramic package. This amplifier
provides 13dB of gain when biased at 70mA and 5.0V.
External DC decoupling capacitors determine low
frequency response. The use of an external resistor
allows for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also available
in chip form (SNA-400), its small size (0.4mm x 0.4mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.
The SNA-476 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-476
DC-8 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
22
20
Product Features
Cascadable 50 Ohm Gain Block
13dB Gain, +17dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Stripline Mount Ceramic Package
Hermetically Sealed
50 Ohm Gain Blocks
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
dBm
18
16
14
0.1
0.5
1
1.5
2
4
6
8
10
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te rs : T e s t C o n d itio n s :
Id = 7 0 m A , Z
0
= 5 0 O h m s
S m a l l S i g n a l P o w e r G a in
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .0 G H z
f = 6 .0 -8 .0 G H z
f = 0 .1 -6 .0 G H z
U n its
dB
dB
dB
dB
G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
4 .3
dBm
dB
M in .
11 .0
1 0 .0
9 .0
Ty p .
1 3 .0
1 2 .0
11 .0
+ /- 1 .0
8 .0
1 7 .0
5 .5
1 .5 :1
3 4 .0
120
1 8 .0
5 .0
-0 .0 0 2 7
-5 .0
5 .7
6 .0
M ax.
G
P
G
F
G a in F la tn e s s
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u re
In p u t / O u tp u t
T h ir d O rd e r In te r c e p t P o in t
G r o u p D e la y
R e v e r s e I s o la t i o n
D e v ic e V o lta g e
D e v ic e G a in T e m p e r a t u r e C o e ff ic ie n t
D e v ic e V o lta g e Te m p e r a t u r e C o e ff ic ie n t
BW 3dB
P
1dB
N F
VSW R
IP
T
3
D
IS O L
VD
d G /d T
d V /d T
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-57