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SNA-676-TR2 参数 Datasheet PDF下载

SNA-676-TR2图片预览
型号: SNA-676-TR2
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 6.5 GHZ ,可级联的砷化镓MMIC放大器 [DC-6.5 GHZ , CASCADABLE GAAS MMIC AMPLIFIER]
分类和应用: 放大器
文件页数/大小: 3 页 / 92 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-676-TR2的Datasheet PDF文件第2页浏览型号SNA-676-TR2的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-676
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
22
20
18
Product Features
Cascadable 50 Ohm Gain Block
11dB Gain, +18dBm P1dB
High Linearity, +36dBm TOIP Typ.
1.5:1 Input and Output VSWR
Operates From a Single DC Supply
Low Cost Stripline Mount Ceramic Package
50 Ohm Gain Blocks
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
dBm
16
14
12
0.1
1
2
3
4
5
6
7
8
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : T e s t C o n d itio n s :
Id = 7 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l G a in
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p re s s io n
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .5 G H z
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
f = 0 .1 -6 .5 G H z
f = 0 .1 -2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -6 .5 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
4 .8
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
U n its
dB
dB
GHz
dBm
M in .
9 .0
8 .0
Ty p .
11 .0
9 .0
6 .5
1 8 .0
1 6 .0
7 .5
8 .5
1 .5 :1
3 6 .0
120
1 7 .0
5 .7
-0 .0 0 2 3
-5 .0
6 .8
M ax.
G
P
BW 3dB
P
1dB
NF
VSW R
IP
T
3
N o is e F ig u r e
In p u t / O u tp u t
T h i r d O r d e r I n t e r c e p t P o in t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v i c e
G a i n
T e m p e r a t u r e C o e ff i c i e n t
D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t
dB
D
IS O L
VD
d G /d T
d V /d T
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-89