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SPA-1218 参数 Datasheet PDF下载

SPA-1218图片预览
型号: SPA-1218
PDF下载: 下载PDF文件 查看货源
内容描述: 1960年兆赫1瓦电源放大器,有源偏置 [1960 MHz 1 Watt Power Amp with Active Bias]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 210 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
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Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
Pin #
1
Function
VC C
Description
VCC is the supply voltage for the active bias network.
Bypassing in the appropriate location as shown on
application schematic is required for optimum RF
performance.
Vbias is the bias control pin for the active bias network.
Device current is set by the current into this pin.
Recommended configuration is shown in the Application
Schematic. Bypassing in the appropriate location as
shown on application schematic is required for optimum
RF performance.
RF input pin. This pin requires the use of an external
DC blocking capacitor chosen for the frequency of
operation.
No connection
3
1
Device Schematic
2
V bi as
2
3
RF In
ACTIVE BIAS
NETWORK
5-8
4
5
N/C
RF Out/Vcc RF output and bias pin. Bias should be supplied to this
pin through an external RF choke. Because DC biasing
is present on this pin, a DC blocking capacitor should
be used in most applications (see application
schematic). The supply side of the bias network should
be well bypassed. An output matching network is
necessary for optimum performance.
RF Out/Vcc Same as Pin 5
RF Out/Vcc Same as Pin 5
RF Out/Vcc Same as Pin 5
6
7
8
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
OP
)/R
th
,j-l
Parameter
Supply C urrent (I
D
)
D evi ce Voltage (V
D
)
Power D i ssi pati on
Operati ng Temperature (T
OP
)
RF Input Power
Storage Temperature Range
Operati ng Juncti on Temperature (T
J
)
Value
750
6.0
4.0
-40 to +85
+500
-40 to +150
+150
U nit
mA
V
W
ºC
mW
ºC
ºC
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101428 Rev A