Preliminary
Preliminary
Preliminary
Product Description
Stanford Microdevices’ SSW-408 is a high performance Gal-
lium Arsenide Field Effect Transistor MMIC switch housed in a
low-cost surface mountable small outline plastic package.
This single-pole, double-throw reflective switch consumes less
than 50uA and can operate with positive or negative 3V to 8V
supply voltages, making it suitable for use in both infrastruc-
ture and subscriber equipment. This switch can be used in all
analog and digital wireless communication systems including
(but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11,
CDPD and GSM.
At +5V or –5V bias, typical output power at 1dB compression
is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm
may be achieved with higher control voltages.
SSW-408
DC-4 GHz High Power GaAs MMIC
SPDT Switch
Isolation vs. Frequency
V
Control
= -5 V
-10
Product Features
•
High Compression Point : up to 4 Watts
•
HIgh Linearity : TOIP +55dBm @2GHz
•
Low DC Power Consumption
•
Low Insertion Loss : 1.2dB at 2GHz
•
Operates from Positive or Negative 3V to 8V
Supplies
•
Low Cost Small Outline Plastic Package
-20
dB
-30
-40
DC
1
2
3
4
GHz
Applications
•
Analog/Digital Wireless Communications
•
Spread Spectrum
•
AMPS, PCS, DECT, IS-95, IS-136, 802.11,
CDPD and GSM.
Electrical Specifications at Ta = 25C
Symbol
Parameters & Test
C onditions: Zo = 50 ohms v = +5 or -5V
Inserti on Loss
Ins
Isolati on
Isol
Input & Output VSWR
(on port)
Input & Output VSWR
(off port)
Output Power @ 2.0 GHz
at 1 dB C ompressi on
Thi rd Order Intercept
TO IP
Id
Isw
D evi ce C urrent
Swi tchi ng Speed
10% to 90% or 90% to 10%
f = 0.05 - 1.0 GHz
f = 1.00 - 2.0 GHz
f = 2.00 - 4.00 GHz
f = 0.05 - 1.0 GHz
f = 1.00 - 2.0 GHz
f = 2.00 - 4.00 GHz
f = 0.05 - 2.0 GHz
f = 2.00 - 4.0 GHz
f = 0.05 - 2.0 GHz
f = 2.00 - 4.0 GHz
V = +8V or -8V
V = +5V or -5V
V = +3V or -3V
V = +8V or -8V
V = +5V or -5V
V = +3V or -3V
dB
dB
dB
dB
dB
dB
uA
nsec
U nits
dB
dB
dB
dB
dB
dB
24
18
Min.
Typ.
0.9
1.2
1.5
28
22
18
1.2
1.5
1.2
1.5
+36
+34
+31
+55
+53
+50
40
10
Max.
1.3
1.5
VSWR on
VSWR off
P
1dB
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101099 Rev -A
STANFORD [ STANFORD MICRODEVICES ]
