快速发布采购 管理采购信息

8550 PDF Datasheet浏览和下载

型号.:
8550
PDF下载:
下载PDF文件
内容描述:
PNP晶体管
[PNP TRANSISTOR]
文件大小:
91 K
文件页数:
1 Pages
品牌Logo:
品牌名称:
STANSON [ STANSON TECHNOLOGY ]
  • 供货商
  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
  
PNP TRANSISTOR
-1.5A
8550
Power Dissipation: 1.0W
Collector Current: -1.5A
Collector-Base Voltage: -45V
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
V
Ic=-0.1mA
-25
Collector-Base Breakdown Voltage
BVcbo
-45
V
Ic=-100
u
A
Emitter-Base Breakdown Voltage
BVebo
V
-5
Ie=-100μA
Collector-Base Leakage
Icbo
-0.1
uA
Vcb=-40V
Collector-Emitter Leakage
Iceo
-0.1
uA
Vce=-20V
Emitter-Base Leakage
Iebo
-0.1
uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce(sat
)
-0.6
V
Ic=-1500mA, Ib=-50mA
Base-Emiiter Saturation Voltage
Vbe(sat)
-1.2
V
Ic=-1500mA, Ib=-50mA
DC Current Gain
Hfe1
85
Vce=-1V,Ic=-50mA
300
Hfe2
50
Vce=-1V,Ic=-500mA
Collector Current
Ic
-0.5
A
Peak Collector Current
Icp
-8 A(Pulse)
Current Gain Bandwidth
f
T
MHz
Vcb=-6V, Ic=-20mA
150
Output Capacitance
Cob
32
pF
Vcb=-20V,Ie=0,f=1MHz
Power Dissipation
Pc
1.0
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
Hfe1 Classification
Rank
Range
B
85-160
C
120-200
D
160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295