PNP TRANSISTOR
-100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage
BVceo
-50
V
Ic=1mA
Collector-Base Breakdown Voltage
BVcbo
-60
V
Ic=5
u
A
Emitter-Base Breakdown Voltage
BVebo
-5
V
Ie=50μA
Collector-Base Leakage
Icbo
-0.1
uA
Vcb=-60V
Emitter-Base Leakage
Iebo
-0.1
uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce（sat）
-0.18 -0.3
V
Ic=-100mA, Ib=-10mA
DC Current Gain
Hfe
90
200 600
Vce=-6.0V,Ic=-1.0mA
Collector Current
Ic
-100
mA
Current Gain Bandwidth
f
T
100 180
MHz
Vce=-6V, Ie=10mA
Output Capacitance
Cob
4.5
6.0
pF
Vcb=-10V,Ie=0,f=1MHz
Power Dissipation
Pc
0.25
W
Junction Temperature
Tj
125
℃
Storage Temperature
Tstg
-55
125
℃
Classification of Hfe
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
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