N Channel MOSFET
2.0A
M02N60B
PIN CONFIGURATION
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
I
DSS
and V
DS
(on) Specified at Elevated
Temperature
1 2 3
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
RATING
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage – Continue
- Non-repetitive
Total Power Dissipation
TO-251/252
TO-220
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
℃
(V
DD
=100V, V
GS
= 10V, I
AS
= 2A, L = 10mH, R
G
= 25
Ω)
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
SYMBOL VALUE
I
D
I
DM
V
GS
V
GSM
P
D
60
60
-55 to 150
20
1.0
62.5
260
2.0
9.0
+/-20
+/-40
UNIT
A
V
V
W
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
℃
mJ
℃/W
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
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