N Channel MOSFET
4.0A
M04N60
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
TO-220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETERS
Continuous Drain Current
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-Forward
Gate-Source Leakage Current-Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Drain Inductance
Total Power Dispation
Thermal Resistance – Junction to Case
Operating and Storage Temperature
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
SYMBOL
I
D
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
P
D
4.5
7.5
74
1.7
-55
150
1.6
**
370
2.5
660
86
19
11
13
35
14
31
4.6
17
2.0
600
0.1
0.5
100
100
4.0
2.2
MIN
TYP
MAX
3.6
UNITS
A
V
mA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
W
V
DD
= 300 V, I
D
=3.6 A, V
GS
= 10 V,
R
G
= 12Ω *
CONDITION
V
GS
=10 V, Ta=25℃
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125℃
V
gsf
= 20 V, V
DS
= 0 V
V
gsr
= 20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 2.2A *
V
DS
= 50 V, I
D
= 2.2A *
V
DS
= 25 V, V
GS
= 0 V, f = 1.0 MHz
V
DS
= 360 V, I
D
= 3.6 A, V
GS
= 10 V *
Measured from the drain lead 0.25” from package to
center of die
Measured from the source lead 0.25” from package
to source bond pad
θ
JC
T
J,
T
STG
V
SD
t
on
t
rr
℃/W
℃
V
ns
ns
I
S
= 3.6 A, V
GS
= 0 V, d
IS
/d
t
= 100A/µs
SOURCE-DRAIN DIODE CHARACTERISTICS
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
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