P Channel Enhancement Mode MOSFET
-3.4A
DESCRIPTION
ST1413AC
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOD-353 (SC-70)
FEATURE
-
20V/-3.4A, R
DS(ON)
= 130m-ohm
D
D
D
S
G
1.4.5.Drain
2.Gate
3.Source
@VGS = -4.5V
-20V/-2.4A, R
DS(ON)
= 150m-ohm
@VGS = -2.5V
-20V/-1.7A,
R
DS(ON)
= 190m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-353 (SC-70) package design
1AYW
1A : Part Marking
Y : Year Code
W : Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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