ST2300SRG
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
20V/6.0A, R
DS(ON)
= 35m (Typ.)
@V
GS
= 10V
20V/5.0A, R
DS(ON)
= 48m
@V
GS
= 4.5V
20V/4.5A, R
DS(ON)
= 90m
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
42YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2300SRG
Package
SOT-23
Part Marking
42YA
※
Process Code : A ~ Z ; a ~ z
※
ST2300SRG ; S : SOT23 R : Tape Reel ; G : Pb – Free
1
ST2300SRG 2005. V1
86-755-83468588 86-755-83755599
STANSON [ STANSON TECHNOLOGY ]
