N Channel Enhancement Mode MOSFET
3.5A
DESCRIPTION
ST2306
The ST2306 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L / SOT-23
3
FEATURE
30V/3.5A, R
DS(ON)
= 70m-ohm
@VGS = 10V
30V/2.8A, R
DS(ON)
= 95m-ohm
@VGS = 5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L /SOT-23 package design
D
G
1
1.Gate
2.Source
S
2
3.Drain
3
06YA
1
S: Subcontractor
2
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
STANSON [ STANSON TECHNOLOGY ]
