N Channel Enhancement Mode MOSFET
ST2300
4A
DESCRIPTION
The ST2300 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
20V/6.0A, R
DS(ON)
= 22mΩ (Typ.)
@V
GS
= 10V
20V/5.0A, R
DS(ON)
= 26mΩ
@V
GS
= 4.5V
20V/4.5A, R
DS(ON)
= 29mΩ
@V
GS
= 2.5V
20V/4.0A, R
DS(ON)
= 35mΩ
@V
GS
= 1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
42YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2300S23RG
Package
SOT-23-3L
Part Marking
42YA
※
Process Code : A ~ Z ; a ~ z
※
ST2300S23RG ; S23 : SOT23-3L R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
STANSON [ STANSON TECHNOLOGY ]
