N Channel Enhancement Mode MOSFET
ST2302M
3.6A
DESCRIPTION
The ST2302M is the N-Channel logic enhancement mode power field effect transistor
are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
20V/3.6A, R
DS(ON)
= 90m-ohm (Typ.)
@VGS = 4.5V
20V/3.1A, R
DS(ON)
= 130m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
S02YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2302MSRG
Package
SOT-23
Part Marking
S02YA
※
Process Code : A ~ Z ; a ~ z
※
ST2302MSRG
S : SOT-23 ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2302M 2007. V1