P Channel Enhancement Mode MOSFET
ST2341
-3.5A
DESCRIPTION
ST2341 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
-20V/-3.3A, R
DS(ON)
= 36m-ohm (Typ.)
@VGS = -10V
-20V/-2.8A, R
DS(ON)
= 45m-ohm
@VGS = -4.5V
-20V/-2.3A, R
DS(ON)
= 55m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
41YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2341S23RG
Package
SOT-23-3L
Part Marking
41YA
※
Process Code : A ~ Z ; a ~ z
※
ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341 2006. Rev.1
STANSON [ STANSON TECHNOLOGY ]
