N Channel Enhancement Mode MOSFET
ST2342
5.0A
DESCRIPTION
ST2342 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
20V/4.8A, R
DS(ON)
= 26mΩ (Typ.)
@V
GS
= 4.5V
20V/4.5A, R
DS(ON)
= 28mΩ
@V
GS
= 2.5V
20V/4.0A, R
DS(ON)
= 36mΩ
@V
GS
= 1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
42YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2342S23RG
Package
SOT-23L
Part Marking
42YA
※
Process Code : A ~ Z ; a ~ z
※
ST2342S23RG
S23 : SOT-3L23 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2342 2006. V1
STANSON [ STANSON TECHNOLOGY ]
