ST3400SRG
N Channel Enhancement Mode MOSFET
5.8A
DESCRIPTION
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
FEATURE
30V/5.8A, R
DS(ON)
= 25m (Typ.)
@V
GS
= 10V
30V/4.8A, R
DS(ON)
= 30m
@V
GS
= 4.5V
30V/4.0A, R
DS(ON)
= 40m
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
PART MARKING
SOT-23
3
A0YA
1
Y: Year Code
2
A: Week Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400SRG 2009. V1
STANSON [ STANSON TECHNOLOGY ]
