ST3401SRG
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
-30V/-4.0A,
R
DS(ON)
= 55m (Typ.)
@V
GS
= -10V
-30V/-3.2A, R
DS(ON)
= 62m
@V
GS
= -4.5V
-30V/-1.2A, R
DS(ON)
= 90m
@V
GS
= -2.5V
Super high density cell design for
Extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23 package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23
3
A1YA
1
Y: Year Code
2
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401SRG 2009. V1
STANSON [ STANSON TECHNOLOGY ]
