N Channel Enhancement Mode MOSFET
ST3400
5.8A
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
FEATURE
30V/5.8A, R
DS(ON)
= 28mΩ (Typ.)
@V
GS
= 10V
30V/4.8A, R
DS(ON)
= 33mΩ
@V
GS
= 4.5V
30V/4.0A, R
DS(ON)
= 40mΩ
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
PART MARKING
SOT-23-3L
3
A0YA
1
Y: Year Code
2
A: Week Code
ORDERING INFORMATION
Part Number
ST3400S23RG
Package
SOT-23-3L
Part Marking
A0YA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
ST3400S23RG
S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
STANSON [ STANSON TECHNOLOGY ]
