N Channel Enhancement Mode MOSFET
ST3402
4A
DESCRIPTION
ST3402 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
30V/2.8A, R
DS(ON)
= 58mΩ
@V
GS
= 10V
30V/2.3A, R
DS(ON)
= 65mΩ
@V
GS
= 4.5V
30V/1.5A, R
DS(ON)
= 105mΩ
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
A2YA
1
Y: Year Code
2
A: Week Code
ORDERING INFORMATION
Part Number
ST3402S23RG
Package
SOT-23-3L
Part Marking
A2YA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
ST3402S23RG
S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1
STANSON [ STANSON TECHNOLOGY ]
