P Channel Enhancement Mode MOSFET
-3.4A
DESCRIPTION
ST3413
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOT-23-3L
3
FEATURE
-
20V/-3.4A, R
DS(ON)
= 95m-ohm
D
G
1
1.Gate
2.Source
S
2
3.Drain
3
@VGS = -4.5V
-20V/-2.4A, R
DS(ON)
= 120m-ohm
@VGS = -2.5V
-20V/-1.7A,
R
DS(ON)
= 145m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
13YA
1
2
A: Process Code
1A: Part Marking Y: Year Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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