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ST6006T220RG 参数 Datasheet PDF下载

ST6006T220RG图片预览
型号: ST6006T220RG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道阳城模式MOSFET [N Channel Enchancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 201 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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N Channel Enchancement Mode MOSFET
60V/60A
DESCRIPTION
ST6006S / ST6006
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters
and power motor controls, these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and offer additional safetv
margin against unexpected voltage transients.
PIN CONFIGURATION
TO-220-3L
ST6006
TO-263-2L
ST6006S
APPLICATIONS
Power Supplies
Converters
Power Motor controls
Bridge Circuit
FEATURE
20V/2.8A, R
DS(ON)
= 85m-ohm
@VGS = 4.5V
20V/2.4A, R
DS(ON)
= 115m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum
DC current capability
SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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