P Channel Enhancement Mode MOSFET
ST7407
-3.4A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=-250uA
V
DS
=VGS,I
D
=-250uA
V
DS
=0V,V
GS
=
±
12V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
V
DS
≦
-5V,V
GS
=-4.5V
V
DS
≦
-5V,V
GS
=-2.5V
V
GS
=-4.5V,I
D
=-3.4A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=-1.8V,I
D
=-1.8A
V
DS
=-5V,I
D
=-2.8V
I
S
=-1.6A,V
GS
=0V
-20
-0.35
V
-0.8
±
100
-1
-5.0
uA
A
0.090 0.100
0.115 0.125
0.150 0.170
V
nA
I
D(on)
R
DS(on)
g
fs
V
SD
-6
-3
Ω
S
V
6.0
-0.8 -1.2
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
V
DS
=-6V
V
GS
=-4.5V
I
D
≣
-2.8A
V
DS
=-6.0V
V
GS
=0V
F=1MH
z
V
DD
=-6V
R
L
=6
Ω
I
D
=-1.0A
V
GEN
=-4.5V
R
G
=6
Ω
4.8
1.0
1.0
485
85
40
10
13
18
15
8.0
nC
pF
16
23
25
20
nS
t
d(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST7407 2006. V1
STANSON [ STANSON TECHNOLOGY ]
