ST9401
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
ST9401 is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in
a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
�½
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
�½
�½
�½
�½
-20V/-2.8A,
R
DS(ON)
= 85mΩ
@V
GS
= -4.5V
-20V/-2.0A, R
DS(ON)
= 120mΩ
@V
GS
= -2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
PART MARKING
SOT-23
3
S01YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST9401SRG
Package
SOT-23
Part Marking
S01YA
※
Process Code
∶
A ~ Z ; a ~ z
※
ST9401SRG
∶
S : SOT23 R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST9401 2005. V1
STANSON [ STANSON TECHNOLOGY ]
