N Channel Enhancement Mode MOSFET
ST9402
3.6A
DESCRIPTION
ST9402 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density
process is especially tailored to minimize on-state resistance.These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
20V/3.6A, R
DS(ON)
= 76mΩ
@VGS = 4.5V
20V/3.1A, R
DS(ON)
= 90 mΩ
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
S02YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST9402SRG
Package
SOT-23
Part Marking
S02YA
※
Process Code : A ~ Z ; a ~ z
※
ST9402SRG
S : SOT23 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST9402 2005. V1
STANSON [ STANSON TECHNOLOGY ]
