STC6332
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
DESCRIPTION
The STC6332 is the N & P-Channel enhancement mode power field effect transistor
using high cell density DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. This device is particularly suited for low voltage application such as
notebook computer power management and other battery powered circuits, where
high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOT-363/SC-70-6L
SOT-363/SC-70-6L
FEATURE
N-Channel
½
20V/0.95A, R
DS(ON)
= 380mΩ (Typ.)
@V
GS
= 4.5V
½
20V/0.75A, R
DS(ON)
= 450mΩ
@V
GS
= 2.5V
½
20V/0.65A, R
DS(ON)
= 800mΩ
@V
GS
= 1.8V
P-Channel
½
-20V/-1.0A, R
DS(ON)
= 520mΩ(Typ.)
@V
GS
= -4.5V
½
-20V/-0.8A, R
DS(ON)
= 700mΩ
@V
GS
= - 2.5V
½
-20V/-0.7A, R
DS(ON)
= 700mΩ
@V
GS
= - 1.8V
½
Super high density cell design for
extremely low R
DS(ON)
½
Exceptional on-resistance and maximum
DC current capability
½
SOT-363(SC-70-6L) package design
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
STANSON [ STANSON TECHNOLOGY ]
